学术报告预告(5月16日)

时间:5月16日上午9:30

地点:四楼报告厅

报告题目:High-performance parallel processing and artificial
intelligence systems based on functional memories”

“HiSIM family of compact integrated-device models for circuit simulation

报告人:Hans Jürgen Mattausch

AbstractThis report gives an overview of important recent developments
in the field of integrated circuits and outlines the related research
activities at Hiroshima University. Two of these research activities
with world-leading results will be explained in more detail.
a)High-performance parallel processing and artificial intelligence
systems based on functional memoriesThe analysis of parallel
information-processing systems reveals that the necessary data exchange
between data-storage and data-processing parts of the system represents
a major limiting factor for system performance. Therefore, in addition
to the number-crunching power of the processing parts, innovations which
substantially improve the bandwidth of the data exchange are essential
for advances in the overall system capabilities. To be practically
useful, such innovations must in particular carefully balance the
bandwidth of the exchanged data amount against the required power
dissipation. The main methods for achieving the data-exchange
improvements will be reviewed, namely an increased memory-access
bandwidth by multi-porting of the memory and a unification of memory and
processing parts of the information-processing system as for example in
associative memories. We will further present the recent advances in
VLSI architectures for realizing higher data-exchange bandwidth by
applying advanced nano-technologies and discuss practical implementation
examples for parallel processors as well as for artificial intelligence
systems with learning and recognition capability.b) HiSIM family of
compact integrated-device models for circuit simulationHiSIM is the name
of a surface-potential-based compact model for advanced sub-100nm scale
MOSFET, which we are developing since more than a decade. HiSIM has
evolved into one of the world’s leading MOSFET models for circuit
simulation. The HiSIM2 model for bulk-MOSFETs is now widely applied and
has been standardized in 2011 by the Compact Model Council as a
world-standard model of the semiconductor industry. More recently, the
HiSIM approach of consistently potential-based modeling has been
successfully extended to a broad range of integrated devices which have
a MOSFET core in common, including SOI-MOSFET , high-voltage MOSFET ,
Insulated-Gate-Bipolar Transistor , thin-film transistor , MOS varactor
and Double-Gate MOSFET . HiSIM-HV became a CMC industry standard in
2008, HiSIM-SOI is in the final standardization stage and the
standardization process for HiSIM-SOTB has started recently. The
presentation will also give an outline of the surface-potential-based
solutions applied in the HiSIM compact models and the methods for
consistently potential-based extensions to derive compact models for all
integrated devices which contain a MOSFET core.BiographyHans Jürgen
Mattausch received the Dipl. Phys. Degree in Experimental Physics from
the University of Dortmund, Dortmund, Germany, in 1977. His diploma
research focused on 2-photon spectroscopy of excitons in covalent
crystals. From 1978 to 1981 he was a researcher at the Max-Planck
Institute for Solid-State Research in Stuttgart, Germany, investigating
new Green’s function approaches for advancing the many-particle theory
of covalent crystals, including Silicon and Diamond. For his research
achievements he received the Dr. rer. nat. degree in Theoretical Physics
from the University of Stuttgart, Stuttgart, Germany, in 1981.In 1982 he
joined the Research Laboratories of Siemens AG in Munich, Germany, where
he was involved in the development of CMOS fabrication technologies,
integrated static memories, RISC processors and broadband
telecommunication circuits. From 1990 he led a research group on
MOS-technology-based power-semiconductor devices, which included
power-device design, modeling and power modules for packaging. In 1995
he joined the Siemens Semiconductor Group as Manager of the Department
for Product Analysis and Improvement in the Chip Card IC Division.Since
1996 he is with Hiroshima University, Higashi-Hiroshima, Japan, where he
is presently a Professor at the Research Institute for Nanodevice and
Bio Systems, and also the Graduate School of Advanced Sciences of
Matter. In addition he serves as the Director of the HiSIM Research
Center and as a member of Hiroshima University’s structural and
educational reform committee.Prof. Mattausch has published about 300
papers in refereed journals and conference proceedings. He is also the
coauthor of a book on advanced surface-potential methods for compact
MOSFET modeling and a book chapter on high-voltage MOSFET models for
circuit simulation. His main present research interests are in the
fields of associative memories with fully-parallel nearest-distance
search capabilities, architectures and VLSI implementation of practical
systems with learning and recognition capabilities for mobile
applications, nano-electronics applications in general, and compact
modeling of integrated devices for circuit simulation. He is leading a
number of research projects and industrial consortia for research-result
applications in these research areas.Prof. Mattausch is serving as TPC
member of the European Solid-State Circuits Conference and the
International Workshop on Compact Modeling. He is a senior member of
IEEE and a member of IEICE.